Memory Wall: Stories

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In general, the term RAM refers solely to solid-state memory devices (either DRAM or SRAM), and more specifically the main memory in most computers. In optical storage, the term DVD-RAM is somewhat of a misnomer since, unlike CD-RW or DVD-RW, it does not need to be erased before reuse. Nevertheless, a DVD-RAM behaves much like a hard disc drive if somewhat slower. a b "EMOTION ENGINE AND GRAPHICS SYNTHESIZER USED IN THE CORE OF PLAYSTATION BECOME ONE CHIP" (PDF). Sony. April 21, 2003. Archived (PDF) from the original on 2017-02-27 . Retrieved 26 June 2019. Hoefler T, Alistarh D, Ben-Nun T, Dryden N, Peste A. Sparsity in Deep Learning: Pruning and growth for efficient inference and training in neural networks. arXiv preprint arXiv:2102.00554. 2021 Jan 31.

Stokes J (2008) Analysis: more than 16 cores may well be pointless. In: Ars Technica. Condé Nast Digital. Available http://arstechnica.com/hardware/news/2008/12/analysis-more-than-16-cores-may-well-be-pointless.ars, Dec. 2008 Rainer Waser (2012). Nanoelectronics and Information Technology. John Wiley & Sons. p.790. ISBN 9783527409273. Archived from the original on August 1, 2016 . Retrieved March 31, 2014. Micikevicius P, Narang S, Alben J, Diamos G, Elsen E, Garcia D, Ginsburg B, Houston M, Kuchaiev O, Venkatesh G, Wu H. Mixed precision training. arXiv preprint arXiv:1710.03740. 2017 Oct 10. IBM Archives -- FAQ's for Products and Services". ibm.com. Archived from the original on 2012-10-23. a b c "Samsung Electronics Develops First 128Mb SDRAM with DDR/SDR Manufacturing Option". Samsung Electronics. Samsung. 10 February 1999 . Retrieved 23 June 2019.

为什么不能靠多GPU堆显存

Samsung Shows Industry's First 2-Gigabit DDR2 SDRAM". Samsung Semiconductor. Samsung. 20 September 2004 . Retrieved 25 June 2019. AI 硬件的主要突破之一是支持了半精度(FP16)运算，用以替代单精度运算[5,6]。这使得算力提高了10倍以上。接下来的挑战是，如何在保证准确度不降低的前提下，进一步将精度从半精度降低到 INT8。 高效部署 Howard AG, Zhu M, Chen B, Kalenichenko D, Wang W, Weyand T, Andreetto M, Adam H. Mobilenets: Efficient convolutional neural networks for mobile vision applications. arXiv preprint arXiv:1704.04861. 2017 Apr 17. Part of this section is transcluded from Synchronous dynamic random-access memory. ( edit| history) Synchronous dynamic random-access memory (SDRAM) The Cutting Edge of IC Technology: The First 294,912-Bit (288K) Dynamic RAM". National Museum of American History. Smithsonian Institution . Retrieved 20 June 2019.

Synchronous dynamic random-access memory (SDRAM) was developed by Samsung Electronics. The first commercial SDRAM chip was the Samsung KM48SL2000, which had a capacity of 16 Mbit. [23] It was introduced by Samsung in 1992, [24] and mass-produced in 1993. [23] The first commercial DDR SDRAM ( double data rate SDRAM) memory chip was Samsung's 64 Mbit DDR SDRAM chip, released in June 1998. [25] GDDR (graphics DDR) is a form of DDR SGRAM (synchronous graphics RAM), which was first released by Samsung as a 16 Mbit memory chip in 1998. [26] Types Semiconductor memory began in the 1960s with bipolar memory, which used bipolar transistors. Although it was faster, it could not compete with the lower price of magnetic core memory. [10] MOS RAM Scott, J.F. (2003). "Nano-Ferroelectrics". In Tsakalakos, Thomas; Ovid'ko, Ilya A.; Vasudevan, Asuri K. (eds.). Nanostructures: Synthesis, Functional Properties and Application. Springer Science & Business Media. pp.584–600 (597). ISBN 9789400710191. See also: Flash memory §Timeline, Read-only memory §Timeline, and Transistor count §Memory SRAM Static random-access memory (SRAM)

a b c d "1966: Semiconductor RAMs Serve High-speed Storage Needs". Computer History Museum . Retrieved 19 June 2019. Wu B, Iandola F, Jin PH, Keutzer K. Squeezedet: Unified, small, low power fully convolutional neural networks for real-time object detection for autonomous driving. InProceedings of the IEEE Conference on Computer Vision and Pattern Recognition Workshops 2017 (pp. 129–137). Cai F, Correll J M, Lee S H, et al. A fully integrated reprogrammable memristor-CMOS system for efficient multiply-accumulate operations. Nat Electron, 2019, 2: 290–299 Coudrain P, Charbonnier J, Garnier A, et al. Active interposer technology for chiplet-based advanced 3D system architectures. In: Proceedings of 2019 IEEE 69th Electronic Components and Technology Conference (ECTC), Las Vegas, 2019. 569–578